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Quantum states and linear response in dc and electromagnetic fields for charge current and spin polarization of electrons at Bi/Si interface with giant spin-orbit coupling

机译:直流和电磁场中的量子态和线性响应   Bi / si界面电子的充电电流和自旋极化   巨大的自旋轨道耦合

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摘要

An expansion of the nearly free-electron model constructed by Frantzeskakis,Pons and Grioni [Phys. Rev. B {\bf 82}, 085440 (2010)] describing quantumstates at Bi/Si(111) interface with giant spin-orbit coupling is developed andapplied for the band structure and spin polarization calculation, as well asfor the linear response analysis for charge current and induced spin caused bydc field and by electromagnetic radiation. It is found that the largespin-orbit coupling in this system may allow resolving the spin-dependentproperties even at room temperature and at realistic collision rate. Thegeometry of the atomic lattice combined with spin-orbit coupling leads to ananisotropic response both for current and spin components related to theorientation of the external field. The in-plane dc electric field produces onlythe in-plane components of spin in the sample while both the in-plane andout-of-plane spin components can be excited by normally propagatingelectromagnetic wave with different polarizations.
机译:由Frantzeskakis,Pons和Grioni构建的近自由电子模型的扩展。修订版B {\ bf 82},085440(2010)]开发并描述了具有自旋轨道耦合的Bi / Si(111)界面处的量子态,并将其应用于能带结构和自旋极化计算以及线性响应分析。直流电流和电磁辐射引起的电荷电流和感应自旋。发现该系统中的大自旋轨道耦合即使在室温和实际碰撞率下也可以解决自旋相关的特性。原子晶格的几何形状与自旋轨道耦合相结合,导致电流和自旋分量的各向异性响应都与外部场的取向有关。平面直流电场仅在样品中产生自旋的平面内分量,而平面内和平面外的自旋分量都可以通过正常传播具有不同极化的电磁波来激发。

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    Khomitsky, D. V.;

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  • 年度 2011
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